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Post doctoral Researcher: Advanced Cryogenic Technologies for Innovative | Research Associate in R1

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Post doctoral Researcher: Advanced Cryogenic Technologies for Innovative

Location:
Cork, Co. Cork
Description:

Post doctoral Researcher: Advanced Cryogenic Technologies for Innovative Computing (ArCTIC) Contract: Full Time/Fixed Term The Tyndall National Institute at University College Cork invite applications for a postdoctoral position focused on the cryogenic characterisation of materials and devices to for quantum computing application. The research position is supported by the KDT Joint Undertaking and Enterprise Ireland through the ArCTIC project. Background ‘ Advanced Cryogenic Technologies for Innovative Computing’ (ArCTIC) is a collaborative European project aiming to close the gap between qubit research and interfacing control systems, which will enable scaled up quantum systems. Cryogenic electronics are an enabler for quantum technology (QT) functionalities and enhanced system performance. The main goal of ArCTIC is to develop scalable cryogenic ICT microsystems and control technology for quantum processors. The technologies developed will have applications in many fields from sensing to communication, leading to important cross-fertilization that will strengthen the forming European ecosystem on cryogenic classical and quantum microsystems. ArCTIC will advance semiconductor technologies and materials, and tailor these for QT requirements and cryogenic applications. Multi-scale physics and data-driven models, cryogenic PDK modelling, device characterization, circuit design activities will support the development of cryogenic microelectronics.The postdoctoral research position will be focused on the processing and electrical characterisation of materials and devices at cryogenic temperature. Defect properties will be explored through impedance spectroscopy and C-V hysteresis measurements from RT down to cryogenic temperatures. The approach adopted relies on comparing the MOS device experimental impedance measurements to the physics based simulated characteristics at different temperatures.The purpose of this activity is to understand the nature and behaviour of interfacial and bulk oxide defects in the MOS gate stacks by exploring their capture and emission properties at different temperatures. Important defect parameters (energy and location) extracted through the use of experimental (C-V & G-V) measurements in combination physics-based simulations and their role in device operation at low temperature will be investigated.The project will enable the candidate to gain experience in MOS device physics, on-wafer electrical characterisation of devices in a cryostat and in an advanced probe station using parametric test equipment. It is expected also that the candidate will attend meetings (face to face and online) and will present and discuss his/her resultsThe successful candidate will have completed a PhD in electrical engineering, or a physics related discipline. Duration : 2 years Key Responsibilities Interaction with project partners for the exchange of materials and test structures for electrical characterisation. Development of processes to form relevant test structures. The candidate will need to take a management role in all aspects of the fabrication of the necessary structures for electrical and opto-electrical characterisation and interaction with project partners. Participate in Education and Public Engagement activities, as required. Ensure all activities are compliant with the Tyndall Quality Management system. Ensure all activities are compliant with the required Health and Safety standards. Carry out any additional duties as may reasonably be required within the general scope and level of the post. Essential Criteria The candidate should have a PhD in Engineering or Physics. They should have a proven track record in semiconductor device processing and electronic characterisation of semiconducting and/or oxide devices. Experience of on-wafter electrical characterisation of semiconductor devices in a probe station. Experience in the fabrication of semiconductor devices (e.g., lithography, sputtering, etching, oxide deposition…) Desirable Criteria Evidence of creative skills/creativity Excellent verbal and written communication skills Strong leadership skills Tyndall National institute has a proactive entrepreneurial culture and we welcome applications from candidates who possess entrepreneurial and creative skills/experience, including the creation of technology start-ups.Appointment may be made on the IUA Researcher Scale € 43,908- € 50,302 per annum. Salary placement on appointment will be in accordance with public sector pay policy.For further information on this position, please contact Dr Karim Cherkaoui Nanoelectronic Materials and Devices Photonics Group, Tyndall National Institute (Email: XXXX@tyndall.ie )Closing date of applications is 31st July, 2024. Application Instructions Please make sure to attach an up to date CV/Resume AND a brief motivation letter outlining how you meet the ‘Essential Criteria’ for this role. Please note that Garda vetting and/or an international police clearance check may form part of the selection process.The University, at its discretion, may undertake to make an additional appointment(s) from this competition following the conclusion of the process.Please note that an appointment to posts advertised will be dependent on University approval, together with the terms of the employment control framework for the higher education sector.At this time, Tyndall National Institute does not require the assistance of recruitment agencies.Tyndall National Institute at University College, Cork is an Equal Opportunities Employer.Powered by JazzHR
Company:
Tyndall National Institute
Posted:
June 24 on The Resumator
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